High-Current-Gain SiC BJTs With Regrown Extrinsic Base and Etched JTE
2008 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 55, no 8, 1894-1898 p.Article in journal (Refereed) Published
This paper describes successful fabrication of 4H-SiC bipolar junction transistors (BJTs) with a regrown extrinsic base layer and an etched junction termination extension (JTE). Large-area 4H-SiC BJTs measuring 1.8 x 1.8 nun (with an active area of 3.24 mm') showed a common emitter current gain 0 of 42, specific on-resistance Rsp ON of 9 mQ - em', and open-base breakdown voltage BVcEO of-1.75 kV at room temperature. The key to successful fabrication of high-current-gain SiC BJTs with a regrown extrinsic base is efficient removal of the p+ regrown layer from the surface of the emitter-base junction. The BJT with p+ regrown layer has the advantage of lower base contact resistivity and current gain that is less sensitive to the distance between the emitter edge and the base contact, compared to a BJT with ion-implanted base. Fabrication of BJTs without ion implantation means less lifetime-reducing defects, and in addition, the surface morphology is improved since high-temperature annealing becomes unnecessary. BJTs with flat-surface junction termination that combine etched regrown layers show about 250 V higher breakdown voltage than BJTs; with only etched flat-surface JTE.
Place, publisher, year, edition, pages
2008. Vol. 55, no 8, 1894-1898 p.
base regrowth, bipolar junction transistors (BJTs), junction, termination extension (JTE), 4H-silicon carbide, 4h-sic bjts
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-17721DOI: 10.1109/ted.2008.926645ISI: 000257950300018ScopusID: 2-s2.0-49249108274OAI: oai:DiVA.org:kth-17721DiVA: diva2:335766
QC 201005252010-08-052010-08-052011-02-16Bibliographically approved