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Polarization of defect related optical transitions in chalcopyrites
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.ORCID iD: 0000-0002-9050-5445
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 9Article in journal (Refereed) Published
Abstract [en]

We investigate the symmetry of shallow acceptors in Cu chalcopyrites by polarization dependent photoluminescence measurements and density functional calculations. We determine the influence of the band symmetry versus the site symmetry. The polarization of the emitted or absorbed light is parallel to the c-axis in the case of CuGaSe2 and perpendicular to the c-axis in the case of CuInSe2. The symmetry of the defects depends in each case on the symmetry of the topmost band. Neither does the site symmetry affect the defect symmetry nor do the defects change the symmetry of the band.

Place, publisher, year, edition, pages
2008. Vol. 93, no 9
Keyword [en]
luminescence
Identifiers
URN: urn:nbn:se:kth:diva-17802DOI: 10.1063/1.2974085ISI: 000258975800033Scopus ID: 2-s2.0-51349127670OAI: oai:DiVA.org:kth-17802DiVA: diva2:335847
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Persson, Clas

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