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Anisotropic hole-mass tensor of CuIn1-xGax(S,Se)(2): Presence of free carriers narrows the energy gap
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.ORCID iD: 0000-0002-9050-5445
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 7Article in journal (Refereed) Published
Abstract [en]

Analysis of the band edges of CuIn1-xGax (S, Se)(2) with x= 0.0, 0.5, and 1.0 reveals that (i) CuIn1-xGaxS2 has larger effective electron m(c) and hole m(v) masses than CuIn1-xGaxSe2; (ii) whereas Ga content affects band curvatures only slightly, the sign of the crystal- field split Delta(cf) as well as the spin-orbit coupling affect my strongly; (iii) the optical response epsilon(2) (h omega) is comparable for all six compounds; and (iv) band filling of electrons (n= 10(19) cm(-3)) and holes (p=n) narrows the band gap by E-g approximate to E-g(0)- 0.1 eV and generates an optical band gap of E-g(opt) approximate to E-g+ 0.2 eV.

Place, publisher, year, edition, pages
2008. Vol. 93, no 7
Keyword [en]
n-type, band-structure, crystals, 4h, 3c, 2h, si, cuinse2, spectra
Identifiers
URN: urn:nbn:se:kth:diva-17805DOI: 10.1063/1.2969467ISI: 000259010300035Scopus ID: 2-s2.0-50249174396OAI: oai:DiVA.org:kth-17805DiVA: diva2:335850
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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