Ultracompact directional couplers realized in InP by utilizing feature size dependent etching
2008 (English)In: Optics Letters, ISSN 0146-9592, E-ISSN 1539-4794, Vol. 33, no 17, 1927-1929 p.Article in journal (Refereed) Published
We present the design, fabrication, and measurement of an ultracompact directional coupler in InP/InGaAsP/InP. By utilizing the lag effect in the dry etching process, in one etch step, deeply etched asymmetric waveguides with a shallow groove in between are fabricated. This special property enhances the coupling efficiency for the directional coupler and thus makes the device ultracompact. We demonstrate directional couplers as short as 55 mu m, which is only 1/30th the length of the conventional design.
Place, publisher, year, edition, pages
2008. Vol. 33, no 17, 1927-1929 p.
silicon-on-insulator, cl-2-h-2, devices
IdentifiersURN: urn:nbn:se:kth:diva-17852DOI: 10.1364/OL.33.001927ISI: 000259653000001ScopusID: 2-s2.0-51749105202OAI: oai:DiVA.org:kth-17852DiVA: diva2:335897
QC 201005252010-08-052010-08-052013-11-19Bibliographically approved