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Compensation in boron-doped CVD diamond
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-8760-1137
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.ORCID iD: 0000-0002-0292-224X
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2008 (English)Article in journal (Refereed) Published
Abstract [en]

Hall-effect measurements on single crystal boron-doped CVD diamond in the temperature interval 80-450 K are presented together with SIMS measurements of the dopant concentration. Capacitance-voltage measurements on rectifying Schottky junctions manufactured on the boron-doped structures are also presented in this context. Evaluation of the compensating donor (N-D) and acceptor concentrations (N-A) show that in certain samples very low compensation ratios (N-D/N-A below 10(-4)) have been achieved. The influence of compensating donors on majority carrier transport and the significance for diamond device performance are briefly discussed.

Place, publisher, year, edition, pages
2008. Vol. 205, no 9, 2190-2194 p.
Keyword [en]
electrical-properties, films, mobility
Identifiers
URN: urn:nbn:se:kth:diva-17853DOI: 10.1002/pssa.200879711ISI: 000259653700017Scopus ID: 2-s2.0-54249092476OAI: oai:DiVA.org:kth-17853DiVA: diva2:335898
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Hallén, AndersLinnarsson, Margareta K

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