Fabrication of 2700-v 12-m Omega center dot cm(2) non ion-implanted 4H-SiC BJTs with common-emitter current gain of 50
2008 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 29, no 10, 1135-1137 p.Article in journal (Refereed) Published
High-voltage blocking (2.7-kV) implantation-free SiC bipolar junction transistors with low ON-state resistance (12 m Omega . cm(2)) and high common-emitter current gain of 50 have been fabricated. A graded-base doping was implemented to provide a low-resistive ohmic contact to the epitaxial base. This design features a fully depleted base layer close to the breakdown voltage providing an efficient epitaxial JTE without ion implantation. Eliminating all ion implantation steps in this approach is beneficial for avoiding high-temperature dopant activation annealing and for avoiding generation of lifetime-killing defects that reduce the current gain.
Place, publisher, year, edition, pages
2008. Vol. 29, no 10, 1135-1137 p.
bipolar junction transistors (BJTs), power transistors, silicon carbide, bipolar junction transistors, layer
IdentifiersURN: urn:nbn:se:kth:diva-17872DOI: 10.1109/led.2008.2004419ISI: 000259812900016ScopusID: 2-s2.0-54849362500OAI: oai:DiVA.org:kth-17872DiVA: diva2:335917
QC 201005252010-08-052010-08-052011-02-16Bibliographically approved