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Effects of series and parallel resistances on the current-voltage characteristics of small-area air-bridge resonant tunneling diode
KTH, School of Biotechnology (BIO), Theoretical Chemistry.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences.
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2008 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 104, no 7Article in journal (Refereed) Published
Abstract [en]

We have studied experimentally and theoretically the effects of series and parallel resistances on the current-voltage (I-V) characteristics of the resonant tunneling diode (RTD) in the format of a small-area freestanding air bridge. It has been shown by standard quantum mechanical considerations that the I-V characteristics consists of a simple resonant current peak (without bistability) and the voltage at the current peak is quite low, whereas experiments show not only a much high current-peak voltage, but also the bistability. Furthermore, experimental peak-to-valley ratio is in general quite low. By analyzing material and device structures, it has been demonstrated that the series resistance in the RTD contacts shifts the peak in current to higher voltage, it also creates the experimentally observed bistability effect in the region of the tunneling resonance. The parallel resistance induces a leakage current and reduces the peak-to-valley ratio. We have further performed similar analyses to many RTD structures reported in the literature and the conclusions remain the same.

Place, publisher, year, edition, pages
2008. Vol. 104, no 7
Keyword [en]
double-barrier structures, peak current densities, intrinsic, bistability, charge accumulation, room-temperature, quantum-well, devices, oscillations, sram, cell
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-17899DOI: 10.1063/1.2993547ISI: 000260125500147Scopus ID: 2-s2.0-54049122968OAI: oai:DiVA.org:kth-17899DiVA: diva2:335944
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Experimental and theoretical study of quantum dot resonant tunneling diodes for single photon detection
Open this publication in new window or tab >>Experimental and theoretical study of quantum dot resonant tunneling diodes for single photon detection
2008 (English)Licentiate thesis, comprehensive summary (Other scientific)
Abstract [en]

Single photon detection has a broad application in the medical, telecommunication, as well as in infrared imaging fields. In this thesis I present my work in studying quantum dot (QD) resonant tunneling diodes (RTD) for single photon detection. The device was processed in the form of a free-standing small-area air bridge. A detailed series of experimental and theoretical characterizations have been performed to understand the electrical properties of the RTDs (without embedding any QDs) and QD-embedded RTDs (QDRTDs). It has been shown that external series and parallel resistances shift the resonant current peak to higher voltage, create the bistability effect observed in I-V characteristics, and reduce the peak-to-valley ratio. For the QDRTD device, three-dimensional wave packet carrier transport simulations show strong influence of the long-range Coulomb potential induced by the hole captured by the embedded InAs QDs, thus demonstrating the fundamental principle of single photon detection.

 

Two works are planned for the continuation of the graduate study after Lic examination. The optical response of the QDRTD will be experimentally and theoretically characterized in order to optimize the quantum efficiency for single photon detection. I will then concentrate on processing a one-dimensional photodetector array aiming at practical biotechnology applications.

Place, publisher, year, edition, pages
Stockholm: KTH, 2008. 36 p.
National Category
Engineering and Technology
Identifiers
urn:nbn:se:kth:diva-9342 (URN)978-91-7415-117-6 (ISBN)
Presentation
2008-10-15, FA31, AlabaNova, Roslagsbacken 21, Stockholm, 13:00 (English)
Supervisors
Note
QC 20101111Available from: 2008-10-21 Created: 2008-10-21 Last updated: 2010-11-11Bibliographically approved

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