Optical reflection from excitonic quantum-dot multilayer structures
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 18, 183117- p.Article in journal (Refereed) Published
We study theoretically and experimentally the optical reflection from excitonic quantum-dot (QD) multilayer structures composed of InAs QDs in a GaAs substrate. Quantum mechanical and finite-difference time-domain numerical calculations indicate that the incident radiation in the optical reflectance measurement photoexcites the InAs QDs which then form excitonic dipoles. The excitonic dipole modifies significantly the dielectric constant of the QD, which results in a reflectance peak in the vicinity of the excitonic energy, as observed experimentally.
Place, publisher, year, edition, pages
2008. Vol. 93, no 18, 183117- p.
excitons, finite difference time-domain analysis, gallium arsenide, III-V semiconductors, indium compounds, multilayers, permittivity, photoluminescence, polaritons, reflectivity, semiconductor quantum dots, photonic crystals, polaritons, lattices
IdentifiersURN: urn:nbn:se:kth:diva-17957DOI: 10.1063/1.3021084ISI: 000260778100076ScopusID: 2-s2.0-55849126707OAI: oai:DiVA.org:kth-17957DiVA: diva2:336002
QC 201005252010-08-052010-08-052016-05-09Bibliographically approved