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Optical reflection from excitonic quantum-dot multilayer structures
KTH, School of Biotechnology (BIO), Theoretical Chemistry (closed 20110512).ORCID iD: 0000-0002-2442-1809
KTH, School of Biotechnology (BIO), Theoretical Chemistry (closed 20110512).ORCID iD: 0000-0002-1763-9383
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2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 93, no 18, 183117- p.Article in journal (Refereed) Published
Abstract [en]

We study theoretically and experimentally the optical reflection from excitonic quantum-dot (QD) multilayer structures composed of InAs QDs in a GaAs substrate. Quantum mechanical and finite-difference time-domain numerical calculations indicate that the incident radiation in the optical reflectance measurement photoexcites the InAs QDs which then form excitonic dipoles. The excitonic dipole modifies significantly the dielectric constant of the QD, which results in a reflectance peak in the vicinity of the excitonic energy, as observed experimentally.

Place, publisher, year, edition, pages
2008. Vol. 93, no 18, 183117- p.
Keyword [en]
excitons, finite difference time-domain analysis, gallium arsenide, III-V semiconductors, indium compounds, multilayers, permittivity, photoluminescence, polaritons, reflectivity, semiconductor quantum dots, photonic crystals, polaritons, lattices
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-17957DOI: 10.1063/1.3021084ISI: 000260778100076Scopus ID: 2-s2.0-55849126707OAI: oai:DiVA.org:kth-17957DiVA: diva2:336002
Note

QC 20100525

Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Fu, YingÅgren, Hans

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Fu, YingÅgren, HansQiu, MinThylén, Lars
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Theoretical Chemistry (closed 20110512)Microelectronics and Applied Physics, MAPOptics and Photonics (Closed 20120101)
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