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Selective epitaxial growth of B-doped SiGe and HCl etch Si for the formation of SiGe: B recessed source and drain (pMOS transistors)
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
2008 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, no 1, 84-86 p.Article in journal (Refereed) Published
Abstract [en]

HCl chemical vapor etching and selective epitaxial growth of B-doped SiGe layers for recessed source/drain application for pMOSFET structure have been presented. The pattern dependency of the etch and epitaxy process were studied and the data correlated to the Si coverage of the chip.

Place, publisher, year, edition, pages
2008. Vol. 517, no 1, 84-86 p.
Keyword [en]
Selective epitaxy growth, SiGe, HCI etch, pMOSFEF, chemical-vapor-deposition, pattern sensitivity, silicon, layers
Identifiers
URN: urn:nbn:se:kth:diva-18034DOI: 10.1016/j.tsf.2008.08.106ISI: 000261510700024Scopus ID: 2-s2.0-54849412777OAI: oai:DiVA.org:kth-18034DiVA: diva2:336079
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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