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The influence of Si coverage in a chip on layer profile of selectively grown Si1-xGex layers using RPCVD technique
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2008 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, no 1, 257-258 p.Article in journal (Refereed) Published
Abstract [en]

The influence of chip layout (Si coverage and geometry) on the pattern dependency of selective epitaxy of SiGe layers has been investigated. The variation of Ge content and the growth rate have been investigated from a chip-to-chip (local effect) or wafer-to-wafer. The results are described by transport and diffusion of the reactant molecules over the chips during epitaxy. Our investigations are focused on the origin of pattern dependency of the deposition and also propose methods to control this growth behavior.

Place, publisher, year, edition, pages
2008. Vol. 517, no 1, 257-258 p.
Keyword [en]
Pattern dependency, Selective epitaxy, RPCVD, chemical-vapor-deposition, epitaxial-growth, parameters
URN: urn:nbn:se:kth:diva-18036DOI: 10.1016/j.tsf.2008.08.085ISI: 000261510700073ScopusID: 2-s2.0-54849427449OAI: diva2:336082
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Hållstedt, Julius.Radamson, Henry H.
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Microelectronics and Information Technology, IMIT
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