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Enhanced n-type dopant solubility in tensile-strained Si
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2008 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, no 1, 331-333 p.Article in journal (Refereed) Published
Abstract [en]

The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a contender to replace As in strain-engineered CMOS devices due to advantages in sheet resistance. While strain reduces resistance for both As and Sb; a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall measurements suggest this is a consequence of a strain-induced Sb solubility enhancement following solid-phase epitaxial regrowth, increasing Sb solubility in Si to levels approaching 10(21) cm(-3). Experiments highlight the importance of maintaining substrate strain during thermal annealing to maintain this high Sb activation.

Place, publisher, year, edition, pages
2008. Vol. 517, no 1, 331-333 p.
Keyword [en]
Antimony, Arsenic, Hall effect, Stress, Ion Implantation, Solid phase, epitaxy, implanted silicon, junctions, sb
Identifiers
URN: urn:nbn:se:kth:diva-18037DOI: 10.1016/j.tsf.2008.08.072ISI: 000261510700095Scopus ID: 2-s2.0-54949158424OAI: oai:DiVA.org:kth-18037DiVA: diva2:336083
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05Bibliographically approved

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Radamson, Henry H.
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