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Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers
KTH, School of Information and Communication Technology (ICT), Microelectronics and Information Technology, IMIT.
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2008 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 517, no 1, 334-336 p.Article in journal (Refereed) Published
Abstract [en]

In this work, the role of strain and growth rate on boron incorporation in selective epitaxial growth (SEG) of B-doped Si1-xGex (x=0.15-0.25) layers in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. A focus has been made on the strain distribution and B incorporation in SEG of SiGe layers.

Place, publisher, year, edition, pages
2008. Vol. 517, no 1, 334-336 p.
Keyword [en]
B incorporation, SiGe, Selective epitaxy, epitaxial-growth
Identifiers
URN: urn:nbn:se:kth:diva-18038DOI: 10.1016/j.tsf.2008.08.078ISI: 000261510700096Scopus ID: 2-s2.0-54849422993OAI: oai:DiVA.org:kth-18038DiVA: diva2:336084
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hållstedt, JuliusRadamson, Henry H.
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