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Monolithically Integrated DFB-EA for 100 Gb/s Ethernet
KTH, School of Information and Communication Technology (ICT), Optics and Photonics.ORCID iD: 0000-0001-7056-4379
KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
2008 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 29, no 12, 1312-1314 p.Article in journal (Refereed) Published
Abstract [en]

The world's first monolithically integrated distributed feedback laser and electroabsorption (EA) modulator with an expected >= 100 GHz -3 dBe bandwidth suitable for 100 Gb/s operation with on-off keying is presented. The design of the EA modulator uses a traveling-wave structure with three active segments and a total active length of 180 mu m resulting in similar to 2.5 V peak-to-peak drive voltage for 10 dB optical extinction ratio and low electrical reflection.

Place, publisher, year, edition, pages
2008. Vol. 29, no 12, 1312-1314 p.
Keyword [en]
High-speed modulator, integrated optoelectronics, semiconductor lasers, waveguide modulator, modulators
Identifiers
URN: urn:nbn:se:kth:diva-18076DOI: 10.1109/led.2008.2007222ISI: 000262062000008Scopus ID: 2-s2.0-57049147918OAI: oai:DiVA.org:kth-18076DiVA: diva2:336122
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Westergren, Urban

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