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Elemental engineering: Epitaxial uranium thin films
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2008 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 78, no 19Article in journal (Refereed) Published
Abstract [en]

Epitaxial films of the well-known alpha (orthorhombic) structure and an unusual hcp form of uranium have been grown on Nb and Gd buffers, respectively, by sputtering techniques. In a 5000 A film of alpha-U a charge-density wave has been observed, and its properties are different from those found in the bulk. The 500 A hcp-U film has a c/a ratio of 1.90(1), which is unusually large for the hcp structure. Theoretical calculations show that this hcp form is metastable and predict that it orders magnetically.

Place, publisher, year, edition, pages
2008. Vol. 78, no 19
Keyword [en]
buffer layers, charge density waves, crystal structure, gadolinium, magnetic epitaxial layers, niobium, sputter deposition, uranium, charge-density-wave, intrinsic stress, alpha-uranium, x-ray, scattering, systems, growth, metals, state
Identifiers
URN: urn:nbn:se:kth:diva-18113DOI: 10.1103/PhysRevB.78.193403ISI: 000262607800020Scopus ID: 2-s2.0-56349141009OAI: oai:DiVA.org:kth-18113DiVA: diva2:336159
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Ahuja, RajeevJohansson, Börje
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