Electronic structure of bismuth terminated InAs(100)
2009 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 603, no 1, 190-196 p.Article in journal (Refereed) Published
Deposition of Bi onto (4 x 2)/c(8 x 2)-InAs(1 0 0) and subsequent annealing results in a (2 x 6) surface reconstruction as seen by low electron energy diffraction. The Bi condensation eliminates the original (4 x 2) Surface reconstruction and creates a new Structure including Bi-dimers. This Surface is metallic and hosts a charge accumulation layer seen through photoemission intensity near the Fermi level. The accumulation layer is located in the bulk region below the surface, but the intensity of the Fermi level structure is strongly dependent oil the Surface order.
Place, publisher, year, edition, pages
2009. Vol. 603, no 1, 190-196 p.
Adatoms, Indium arsenide, Bismuth, Photoemission, 2 DEG, Reconstruction, scanning-tunneling-microscopy, accumulation layer, surface, reconstructions, photoemission, inas, gas
IdentifiersURN: urn:nbn:se:kth:diva-18136DOI: 10.1016/j.susc.2008.10.042ISI: 000262828000032OAI: oai:DiVA.org:kth-18136DiVA: diva2:336182
QC 201005252010-08-052010-08-052012-03-20Bibliographically approved