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System Performances of On-Chip Silicon Microring Delay Line for RZ, CSRZ, RZ-DB and RZ-AMI Signals
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
KTH, School of Information and Communication Technology (ICT), Microelectronics and Applied Physics, MAP.
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2008 (English)In: Journal of Lightwave Technology, ISSN 0733-8724, E-ISSN 1558-2213, Vol. 26, no 21-24, 3744-3751 p.Article in journal (Refereed) Published
Abstract [en]

We theoretically study the group-delay characteristics of a silicon microring resonator based on the coupled mode theory, and experimentally demonstrate error-free operations of an on-chip delay line using a silicon-on-insulator (SOI) microring resonator with a 20-mu m radius. Four signals of different modulation formats are examined at 5 Gb/s, including return-to-zero (RZ), carrier-suppressed return-to-zero (CSRZ), return-to-zero duobinary (RZ-DB), and return-to-zero alternate-mark-inversion (RZ-AMI). Bit error rate (BER) measurements show that the maximal delay times with error-free operations are 80,95, 110, and 65 ps, respectively, corresponding to a fractional group delay of similar to 0.4, similar to 0.5, similar to 0.55, and similar to 0.35. The differences in delay and signal degradations have been investigated based on the signal spectra and pattern dependences. Although the delays are demonstrated in a single ring resonator, the analysis is applicable in slow-light resonance structures such as all-pass filters (APF) and coupled resonator optical waveguides (CROW).

Place, publisher, year, edition, pages
2008. Vol. 26, no 21-24, 3744-3751 p.
Keyword [en]
Delay line, microring resonator, modulation format, silicon photonics, optical modulation formats, wave-guides, slow-light, transmission, absorption, photonics, duobinary, buffers
URN: urn:nbn:se:kth:diva-18164DOI: 10.1109/jlt.2008.2005510ISI: 000263225000028ScopusID: 2-s2.0-60949095648OAI: diva2:336210
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-03-15Bibliographically approved
In thesis
1. Silicon Based Photonic Devices and Their Applications
Open this publication in new window or tab >>Silicon Based Photonic Devices and Their Applications
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The integration of modern electronic devices for information processing is rapidly ap-proaching an interconnect bottleneck. Silicon photonics can be a promising solution forcircumventing this bottleneck, as already being anticipated by many electronics manu-facturers including HP, IBM and Intel. In particular, optical interconnects can expeditedata transfer both between and within microchips. This thesis aims at two basic buildingblocks of silicon photonics: waveguides and resonators and addresses their applications inoptical signal processing and their potential integration with plasmonic devices.

Firstly, the basic theories of waveguide and resonator are introduced. For a singleresonator which acts as a basic signal processing unit, the transmission, phase shift andgroup delay exhibit unique characteristics. Mode splitting is observed in both a singleresonator and a coupled-resonator system. By tuning the configuration of the coupled-resonator system, one can obtain different transmission characteristics for more advancedsignal processing.

Secondly, the fabrication and characterization of silicon waveguides and resonatorsused in the thesis are introduced. The fabrication is carried out with e-beam lithographyfollowed by inductively coupled plasma etching. A vertical grating coupling method isadopted to characterize the transmission spectrum.

Thirdly, based on a single-ring resonator, three kinds of signal processing are ex-perimentally demonstrated: (1) 10 Gb/s format conversion from non-return-to-zero toalternate-mark-inversion signal; (2) a microwave photonic phase shifter providing a tun-able phase shift of 0–4.6 rad for a 20 GHz signal; (3) a delay line providing maximaldelay times of 80 ps, 95 ps, 110 ps and 65 ps, respectively, for signals in return-to-zero,carrier-suppressed return-to-zero, return-to-zero duobinary, and return-to-zero alternate-mark-inversion formats.

Fourthly, based on a single-ring resonator with mode-splitting, two kinds of signalprocessing are experimentally demonstrated: (1) a dense wavelength conversion using thefree carrier dispersion effect with a data rate ranging from 500 Mb/s to 5 Gb/s; (2) amaximum pulse advancement of 130 ps for a 1 ns signal pulse.

Since silicon photonic devices are limited by diffraction limit, we further look intotheir hybridization with the diffraction-limit-free plasmonic devices. Two directional cou-plers from a Si photonic waveguide to a hybrid Si-metal plasmonic waveguide and to ametal-insulator-metal plasmonic waveguide are investigated. The proposed hybrid cou-plers feature a short coupling length, a high coupling efficiency, a high extinction ratioand a low insertion loss.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2011. xv, 75 p.
Trita-ICT/MAP AVH, ISSN 1653-7610
National Category
Atom and Molecular Physics and Optics
urn:nbn:se:kth:diva-31290 (URN)
Public defence
2011-04-07, Sal / Hall C1, KTH-Electrum, Isafjordsgatan 22, Kista, 10:00 (English)
QC 20110315Available from: 2011-03-15 Created: 2011-03-11 Last updated: 2011-03-15Bibliographically approved

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