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Heat transport in the quasi-single-helicity islands of EXTRAP T2R
KTH, School of Electrical Engineering (EES), Fusion Plasma Physics. KTH, School of Electrical Engineering (EES), Centres, Alfvén Laboratory Centre for Space and Fusion Plasma Physics.ORCID iD: 0000-0002-9546-4494
KTH, School of Electrical Engineering (EES), Fusion Plasma Physics. KTH, School of Electrical Engineering (EES), Centres, Alfvén Laboratory Centre for Space and Fusion Plasma Physics.ORCID iD: 0000-0002-5259-0458
KTH, School of Electrical Engineering (EES), Fusion Plasma Physics. KTH, School of Electrical Engineering (EES), Centres, Alfvén Laboratory Centre for Space and Fusion Plasma Physics.
2009 (English)In: Physics of Plasmas, ISSN 1070-664X, E-ISSN 1089-7674, Vol. 16, no 3Article in journal (Refereed) Published
Abstract [en]

The heat transport inside the magnetic island generated in a quasi-single-helicity regime of a reversed-field pinch device is studied by using a numerical code that simulates the electron temperature and the soft x-ray emissivity. The heat diffusivity chi(e) inside the island is determined by matching the simulated signals with the experimental ones. Inside the island, chi(e) turns out to be from one to two orders of magnitude lower than the diffusivity in the surrounding plasma, where the magnetic field is stochastic. Furthermore, the heat transport properties inside the island are studied in correlation with the plasma current and with the amplitude of the magnetic fluctuations.

Place, publisher, year, edition, pages
2009. Vol. 16, no 3
Keyword [en]
plasma transport processes, reversed field pinch, reversed-field-pinch, radiological applications, line integrals, configurations, representation, plasmas
National Category
Fusion, Plasma and Space Physics
Identifiers
URN: urn:nbn:se:kth:diva-18324DOI: 10.1063/1.3081551ISI: 000264781800027Scopus ID: 2-s2.0-63649153133OAI: oai:DiVA.org:kth-18324DiVA: diva2:336370
Note

QC 20150727

Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Frassinetti, LorenzoBrunsell, Per R.

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