Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers
2009 (English)In: IEEE transactions on nanotechnology, ISSN 1536-125X, E-ISSN 1941-0085, Vol. 8, no 3, 291-297 p.Article in journal (Refereed) Published
The influence of chip layout and architecture on the pattern dependency of selective epitaxy of B-doped SiGe layers has been studied. The variations of Ge-, B-content, and growth rate have been investigated locally within a wafer and globally from wafer to wafer. The results are described by the gas depletion theory. Methods to control the variation of layer profile are suggested.
Place, publisher, year, edition, pages
2009. Vol. 8, no 3, 291-297 p.
Loading effect, pattern dependency, selective epitaxy, SiGe, chemical-vapor-deposition, parameters
IdentifiersURN: urn:nbn:se:kth:diva-18435DOI: 10.1109/tnano.2008.2009219ISI: 000266162900004ScopusID: 2-s2.0-67249161740OAI: oai:DiVA.org:kth-18435DiVA: diva2:336482
QC 201005252010-08-052010-08-052011-04-05Bibliographically approved