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Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation
KTH, School of Information and Communication Technology (ICT).
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
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2009 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 30, no 6, 608-610 p.Article in journal (Refereed) Published
Abstract [en]

The presence of carbon at the interface between NiSi and Si has been found to participate in the process of modification of effective Schottky barrier heights using the dopant segregation (DS) method. Carbon alone results in an increased phi(bn) from 0.7 to above 0.9 eV. Boron diffusion in NiSi is inhibited by carbon, and no B-DS at the NiSi/Si interface occurs below 600 degrees C. Above this temperature, B-DS at this interface is evident thus keeping phi(bn) high. The presence of interfacial carbon leads to an increased interfacial As concentration resulting in beneficial effects in tuning phi(bn) above 1.0 eV by As-DS.

Place, publisher, year, edition, pages
2009. Vol. 30, no 6, 608-610 p.
Keyword [en]
Carbon implantation, dopant segregation (DS), NiSi, Schottky barrier, height (SBH), Schottky diode, mosfets, technology, silicon
Identifiers
URN: urn:nbn:se:kth:diva-18455DOI: 10.1109/led.2009.2018285ISI: 000266409200009Scopus ID: 2-s2.0-67649372857OAI: oai:DiVA.org:kth-18455DiVA: diva2:336502
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hellström, Per-Erik

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