Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation
2009 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 30, no 6, 608-610 p.Article in journal (Refereed) Published
The presence of carbon at the interface between NiSi and Si has been found to participate in the process of modification of effective Schottky barrier heights using the dopant segregation (DS) method. Carbon alone results in an increased phi(bn) from 0.7 to above 0.9 eV. Boron diffusion in NiSi is inhibited by carbon, and no B-DS at the NiSi/Si interface occurs below 600 degrees C. Above this temperature, B-DS at this interface is evident thus keeping phi(bn) high. The presence of interfacial carbon leads to an increased interfacial As concentration resulting in beneficial effects in tuning phi(bn) above 1.0 eV by As-DS.
Place, publisher, year, edition, pages
2009. Vol. 30, no 6, 608-610 p.
Carbon implantation, dopant segregation (DS), NiSi, Schottky barrier, height (SBH), Schottky diode, mosfets, technology, silicon
IdentifiersURN: urn:nbn:se:kth:diva-18455DOI: 10.1109/led.2009.2018285ISI: 000266409200009ScopusID: 2-s2.0-67649372857OAI: oai:DiVA.org:kth-18455DiVA: diva2:336502
QC 201005252010-08-052010-08-052011-02-01Bibliographically approved