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UV laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films
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2009 (English)Article in journal (Refereed) Published
Abstract [en]

We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithography.

Place, publisher, year, edition, pages
2009. Vol. 206, no 7, 1484-1487 p.
Keyword [en]
evaporated v2o5 films, lithography, resist, oxides, electrochromism, photochromism, surfaces, devices
URN: urn:nbn:se:kth:diva-18648DOI: 10.1002/pssa.200824175ISI: 000268564200017ScopusID: 2-s2.0-67650462879OAI: diva2:336695
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2010-12-17Bibliographically approved

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Grishin, Alexander M.
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Material Physics, MF

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