UV laser modification and selective ion-beam etching of amorphous vanadium pentoxide thin films
2009 (English)Article in journal (Refereed) Published
We present the results on excimer laser modification and patterning of amorphous vanadium pentoxide films. Wet positive resist-type and Ar ion-beam negative resist-type etching techniques were employed to develop UV-modified films. V2O5 films were found to possess sufficient resistivity compared to standard electronic materials thus to be promising masks for sub-micron lithography.
Place, publisher, year, edition, pages
2009. Vol. 206, no 7, 1484-1487 p.
evaporated v2o5 films, lithography, resist, oxides, electrochromism, photochromism, surfaces, devices
IdentifiersURN: urn:nbn:se:kth:diva-18648DOI: 10.1002/pssa.200824175ISI: 000268564200017ScopusID: 2-s2.0-67650462879OAI: oai:DiVA.org:kth-18648DiVA: diva2:336695
QC 201005252010-08-052010-08-052010-12-17Bibliographically approved