Dynamics of carrier recombination and localization in AlGaN quantum wells studied by time-resolved transmission spectroscopy
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 95, no 9Article in journal (Refereed) Published
Time-resolved transmission and photoluminescence measurements were performed on Al0.35Ga0.65N/Al0.49Ga0.51N quantum well structures with different well widths. Comparison of transmission and luminescence data shows that dynamics of electrons and holes excited into extended quantum well states are governed by nonradiative recombination. For excitation into potential minima formed by band gap fluctuations, localization of electrons was observed. Excitation energy dependence of the pump-probe transient shape allows estimating localization potential, which is about 80 meV independently of the well width, and is probably caused by fluctuations of AlN molar fraction.
Place, publisher, year, edition, pages
2009. Vol. 95, no 9
IdentifiersURN: urn:nbn:se:kth:diva-18738DOI: 10.1063/1.3222972ISI: 000269625800022ScopusID: 2-s2.0-69949157239OAI: oai:DiVA.org:kth-18738DiVA: diva2:336785
QC 201005252010-08-052010-08-052012-11-01Bibliographically approved