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Evaluation of optical quality and properties of Ga0.64In0.36N0.006As0.994 lattice matched to GaAs by using photoluminescence spectroscopy
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2009 (English)In: Opto-Electronics Review, ISSN 1230-3402, E-ISSN 1896-3757, Vol. 17, no 3, 260-264 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated optical properties of Ga0.64In0.36N0.006As0.994/GaAs single quantum-well structures using photoluminescence technique. We have found that nitrogen creates potential fluctuations in the InGaNAs structures, so it is the cause of trap centres in these structures and leads to localized excitons recombination dynamics. The near-band edge PL at 2 K exhibited a blueshift with an increase in excitation intensity of a sample but there is not such a shift in the PL peak position energy of same sample at 150 K. It has been found that PL spectra have a large full width at half maximum (FWHM) value at 2 K. These results are discussed in terms of carrier localization. Additionally, our results suggest decreasing PL integrated intensity in this structure, possibly due to non-radiative recombination. It has been shown that thermal annealing reduces the local strain created by nitrogen. By annealing process, a blue shifted emission can be observed.

Place, publisher, year, edition, pages
2009. Vol. 17, no 3, 260-264 p.
Keyword [en]
optical efficiency, photoluminescence (PL), InGaNAs/GaAs single quantum, well (SQW) nanostructures, localized excitons, full width at half, maximum (FWHM), PL integrated intensity, thermal annealing, single quantum-wells, gainnas, alloys, temperature, absorption, gaas1-xnx
Identifiers
URN: urn:nbn:se:kth:diva-18771DOI: 10.2478/s11772-009-0008-9ISI: 000269898100012Scopus ID: 2-s2.0-70349626797OAI: oai:DiVA.org:kth-18771DiVA: diva2:336818
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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Hammar, Mattias

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