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Time-resolved luminescence studies of proton-implanted GaN
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.ORCID iD: 0000-0002-4606-4865
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-8760-1137
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 95, no 11Article in journal (Refereed) Published
Abstract [en]

Time-resolved photoluminescence measurements performed on proton implanted and annealed GaN layers have shown that carrier lifetime can be tuned over two orders of magnitude and, at implantation dose of 1 x 10(15) cm(-2), decreases down to a few picoseconds. With annealing at temperatures between 250 and 750 degrees C, carrier lifetime, contrary to electrical characteristics, is only slightly restored, indicating that electrical compensation and carrier dynamics are governed by different defects. Ga vacancies, free and bound at threading dislocations, are suggested as the most probable defects, responsible for electrical compensation and carrier lifetime quenching.

Place, publisher, year, edition, pages
2009. Vol. 95, no 11
Keyword [en]
n-type gan, defects, recombination, dislocations, acceptors, electron
Identifiers
URN: urn:nbn:se:kth:diva-18786DOI: 10.1063/1.3226108ISI: 000270096900041Scopus ID: 2-s2.0-70349479052OAI: oai:DiVA.org:kth-18786DiVA: diva2:336833
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved
In thesis
1. Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
Open this publication in new window or tab >>Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2011. 98 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2011:12
Keyword
AIGaN, deep-UV LEDs, polarization fields, screening, exciton binding energy, alloy fluctuations, near-field microscopy, carrier dynamics, LED aging
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-37917 (URN)978-91-7501-065-6 (ISBN)
Public defence
2011-09-20, Sal / Hall C1, Electrum,, Isafjordsgatan 26, Kista, 13:00 (English)
Opponent
Supervisors
Note
QC 20110831Available from: 2011-08-31 Created: 2011-08-19 Last updated: 2012-02-23Bibliographically approved

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Marcinkevicius, SauliusHallén, Anders

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