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Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric
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2009 (English)In: Chinese Physics Letters, ISSN 0256-307X, E-ISSN 1741-3540, Vol. 26, no 10Article in journal (Refereed) Published
Abstract [en]

We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by (3-Aminopropyl)-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 x 10(11) cm(-2) and a diameter range of 5-8 nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for +/- 11 V gate voltage sweeps at 1 MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1 ms, a leakage current density of 2.9 x 10(-8) A/cm(-2) at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.

Place, publisher, year, edition, pages
2009. Vol. 26, no 10
Keyword [en]
semiconductor structure, fabrication, retention
Identifiers
URN: urn:nbn:se:kth:diva-18811ISI: 000270303200055Scopus ID: 2-s2.0-71049119769OAI: oai:DiVA.org:kth-18811DiVA: diva2:336858
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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