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Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers
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2009 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 311, no 18, 4356-4359 p.Article in journal (Refereed) Published
Abstract [en]

A route for synthesizing high Mg content single-phase wurtzite MgZnO films having band gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on Al2O3 substrates. Importantly, a low Mg content "quasi-homo" buffer, Mg0.17Zn0.83O, was applied to accommodate a host of structural discrepancies and therefore, avoiding phase separation in a high Mg content film, Mg0.55Zn0.45O, as proved by X-ray diffraction. The Mg fraction in the overgrown single-phase epilayer, Mg0.55Zn0.45O, was confirmed by Rutherford backscattering spectrometry.

Place, publisher, year, edition, pages
2009. Vol. 311, no 18, 4356-4359 p.
Keyword [en]
Phase separation, Solar-blind, Molecular beam epitaxy, MgZnO, ZnO, ultraviolet photodetectors, mgxzn1-xo, heterostructures, alloys
URN: urn:nbn:se:kth:diva-18844DOI: 10.1016/j.jcrysgro.2009.07.030ISI: 000270621100012ScopusID: 2-s2.0-69149107680OAI: diva2:336891
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-02-01Bibliographically approved

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Hallén, Anders.
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Microelectronics and Information Technology, IMIT
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