High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension
2009 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 30, no 11, 1170-1172 p.Article in journal (Refereed) Published
Implantation-free mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV (about 80% of the theoretical value) were fabricated, measured, and analyzed by device simulation and optical imaging measurements at breakdown. The key step in achieving a high breakdown voltage is a controlled etching into the epitaxially grown p-doped anode layer to reach an optimum dopant dose of similar to 1.2 x 10(13) cm(-2) in the junction termination extension (JTE). Electroluminescence revealed a localized avalanche breakdown that is in good agreement with device simulation. A comparison of diodes with single-and double-zone etched JTEs shows a higher breakdown voltage and a less sensitivity to varying processing conditions for diodes with a two-zone JTE.
Place, publisher, year, edition, pages
2009. Vol. 30, no 11, 1170-1172 p.
Junction termination extension, PiN diode, 4H-SiC
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-18894DOI: 10.1109/led.2009.2030374ISI: 000271151500018ScopusID: 2-s2.0-70350612871OAI: oai:DiVA.org:kth-18894DiVA: diva2:336941
QC 201005252010-08-052010-08-052012-05-22Bibliographically approved