Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy
2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 95, no 18Article in journal (Refereed) Published
Emission from a 285 nm AlGaN quantum well light emitting diode has been studied by scanning near-field optical spectroscopy. The scans revealed micrometer-size domainlike areas emitting with a higher intensity and at a longer wavelength; presumably, because of a lower AlN molar fraction in these regions. Experiments performed on different days have shown that with time, intensity from these spots increases and emission wavelength shifts to the red, indicating a further change in the quantum well alloy composition. This has allowed distinguishing an aging mechanism that involves locally increased current, heating, and atom migration.
Place, publisher, year, edition, pages
2009. Vol. 95, no 18
ageing, aluminium compounds, gallium compounds, III-V semiconductors, light emitting diodes, semiconductor quantum wells, wide band gap, semiconductors, chemical-vapor-deposition, uv leds, gan, aln, nm
IdentifiersURN: urn:nbn:se:kth:diva-18947DOI: 10.1063/1.3262964ISI: 000271666800033ScopusID: 2-s2.0-71049166859OAI: oai:DiVA.org:kth-18947DiVA: diva2:336994
QC 201005252010-08-052010-08-052011-08-30Bibliographically approved