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Aging of AlGaN quantum well light emitting diode studied by scanning near-field optical spectroscopy
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Optics.ORCID iD: 0000-0002-4606-4865
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2009 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 95, no 18Article in journal (Refereed) Published
Abstract [en]

Emission from a 285 nm AlGaN quantum well light emitting diode has been studied by scanning near-field optical spectroscopy. The scans revealed micrometer-size domainlike areas emitting with a higher intensity and at a longer wavelength; presumably, because of a lower AlN molar fraction in these regions. Experiments performed on different days have shown that with time, intensity from these spots increases and emission wavelength shifts to the red, indicating a further change in the quantum well alloy composition. This has allowed distinguishing an aging mechanism that involves locally increased current, heating, and atom migration.

Place, publisher, year, edition, pages
2009. Vol. 95, no 18
Keyword [en]
ageing, aluminium compounds, gallium compounds, III-V semiconductors, light emitting diodes, semiconductor quantum wells, wide band gap, semiconductors, chemical-vapor-deposition, uv leds, gan, aln, nm
Identifiers
URN: urn:nbn:se:kth:diva-18947DOI: 10.1063/1.3262964ISI: 000271666800033Scopus ID: 2-s2.0-71049166859OAI: oai:DiVA.org:kth-18947DiVA: diva2:336994
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-08-30Bibliographically approved
In thesis
1. Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
Open this publication in new window or tab >>Optical properties and degradation of deep ultraviolet AIGaN-based light-emitting diodes
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2011. 98 p.
Series
Trita-ICT/MAP AVH, ISSN 1653-7610 ; 2011:12
Keyword
AIGaN, deep-UV LEDs, polarization fields, screening, exciton binding energy, alloy fluctuations, near-field microscopy, carrier dynamics, LED aging
National Category
Atom and Molecular Physics and Optics
Identifiers
urn:nbn:se:kth:diva-37917 (URN)978-91-7501-065-6 (ISBN)
Public defence
2011-09-20, Sal / Hall C1, Electrum,, Isafjordsgatan 26, Kista, 13:00 (English)
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Note
QC 20110831Available from: 2011-08-31 Created: 2011-08-19 Last updated: 2012-02-23Bibliographically approved

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Marcinkevicius, Saulius

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