Etching of silicon nanowires on Ag(110) by atomic hydrogen
2009 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 603, no 23, 3350-3354 p.Article in journal (Refereed) Published
Scanning Tunnelling Microscopy, High Resolution Electron Energy Loss Spectroscopy and High Resolution X-Ray Photoelectron Spectroscopy have been used to study the adsorption of atomic hydrogen onto Si nanowires grown on Ag(1 1 0). We demonstrate that the hydrogen strongly interacts with the Si nanowires modifying their structural and electronic properties. Hydrogen atoms etch the Si nanowires and eventually lead to their complete removal from the Ag(1 1 0) surface.
Place, publisher, year, edition, pages
2009. Vol. 603, no 23, 3350-3354 p.
Atomic hydrogen, Silicon nanowires, Scanning Tunnelling Microscopy, X-Ray Photoelectron Spectroscopy, Electron Energy Loss Spectroscopy, energy-loss spectroscopy, surfaces, si(111), photoemission, geometry, boron
IdentifiersURN: urn:nbn:se:kth:diva-19016DOI: 10.1016/j.susc.2009.09.023ISI: 000272431600004ScopusID: 2-s2.0-70449511131OAI: oai:DiVA.org:kth-19016DiVA: diva2:337063
QC 201005252010-08-052010-08-052011-01-19Bibliographically approved