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Etching of silicon nanowires on Ag(110) by atomic hydrogen
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2009 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 603, no 23, 3350-3354 p.Article in journal (Refereed) Published
Abstract [en]

Scanning Tunnelling Microscopy, High Resolution Electron Energy Loss Spectroscopy and High Resolution X-Ray Photoelectron Spectroscopy have been used to study the adsorption of atomic hydrogen onto Si nanowires grown on Ag(1 1 0). We demonstrate that the hydrogen strongly interacts with the Si nanowires modifying their structural and electronic properties. Hydrogen atoms etch the Si nanowires and eventually lead to their complete removal from the Ag(1 1 0) surface.

Place, publisher, year, edition, pages
2009. Vol. 603, no 23, 3350-3354 p.
Keyword [en]
Atomic hydrogen, Silicon nanowires, Scanning Tunnelling Microscopy, X-Ray Photoelectron Spectroscopy, Electron Energy Loss Spectroscopy, energy-loss spectroscopy, surfaces, si(111), photoemission, geometry, boron
URN: urn:nbn:se:kth:diva-19016DOI: 10.1016/j.susc.2009.09.023ISI: 000272431600004ScopusID: 2-s2.0-70449511131OAI: diva2:337063
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-01-19Bibliographically approved

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Palmgren, PålGöthelid, Mats
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