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Experimental Demonstration of Deeply-Etched SiO2 Ridge Optical Waveguides and Devices
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2010 (English)In: IEEE Journal of Quantum Electronics, ISSN 0018-9197, E-ISSN 1558-1713, Vol. 46, no 1, 28-34 p.Article in journal (Refereed) Published
Abstract [en]

Deeply-etched SiO2 optical ridge waveguides are fabricated and characterized. A detailed discussion of the fabrication process (especially for the deep etching process) is presented. The measured propagation losses for the fabricated waveguides with different core widths range from 0.33 similar to 0.81 dB/mm. The loss is mainly caused by the scattering due to the sidewall roughness. The losses in bending sections are also characterized, which show the possibility of realizing a small bending radius (several tens of microns). 1 x N(N = 2, 4, 8) multimode interference couplers based on the deeply-etched SiO ridge waveguide are also fabricated and show fairly good performances.

Place, publisher, year, edition, pages
2010. Vol. 46, no 1, 28-34 p.
Keyword [en]
Bending, deep etching, loss, multimode interference (MMI) coupler, ridge waveguide, SiO2, planar lightwave circuits, high-density
Identifiers
URN: urn:nbn:se:kth:diva-19034DOI: 10.1109/jqe.2009.2023610ISI: 000272600700001OAI: oai:DiVA.org:kth-19034DiVA: diva2:337081
Note
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2017-12-12Bibliographically approved

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He, Sailing

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