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Dielectric function of quantum dots in the strong confinement regime
KTH, School of Information and Communication Technology (ICT), Optics and Photonics, Photonics.
KTH, School of Information and Communication Technology (ICT), Optics and Photonics.
2010 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 107, no 6Article in journal (Refereed) Published
Abstract [en]

The complex dielectric function of quantum dots (QDs) with a core-shell structure is modeled in the strong confinement regime. These results should be useful for the design of negative epsilon optical metamaterials, where the gain due to QDs could be an essential ingredient. Using the dielectric function it is also shown that conventional expressions for the gain substantially overestimate it for narrow linewidths.

Place, publisher, year, edition, pages
2010. Vol. 107, no 6
Keyword [en]
absorption coefficients, colloids, dielectric function, gallium, arsenide, ground states, III-V semiconductors, indium compounds, semiconductor quantum dots, gain-assisted propagation, wave-guides, semiconductors, threshold, electron, lasers
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-19361DOI: 10.1063/1.3309343ISI: 000276210800087Scopus ID: 2-s2.0-77950553211OAI: oai:DiVA.org:kth-19361DiVA: diva2:337408
Funder
Swedish Research Council
Note
QC 20110119Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-01-19Bibliographically approved

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