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Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
KTH, School of Industrial Engineering and Management (ITM), Materials Science and Engineering, Applied Material Physics.
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2010 (English)In: Journal of Electron Spectroscopy and Related Phenomena, ISSN 0368-2048, Vol. 177, no 1, 52-57 p.Article in journal (Refereed) Published
Abstract [en]

We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges.

Place, publisher, year, edition, pages
2010. Vol. 177, no 1, 52-57 p.
Keyword [en]
Surface core-level shift (SCLS), Synchrotron radiation photoelectron, spectroscopy, Ab initio calculations, Surface reconstruction, Indium, arsenide (InAs), Indium antimonide (InSb), initio molecular-dynamics, total-energy calculations, augmented-wave, method, charge-transfer, compound semiconductors, gaas(001) surface, basis-set, photoemission, reconstruction, adsorption
National Category
Other Engineering and Technologies not elsewhere specified
URN: urn:nbn:se:kth:diva-19398DOI: 10.1016/j.elspec.2010.02.002ISI: 000276713800009ScopusID: 2-s2.0-77949271532OAI: diva2:337445
Swedish Research Council
QC 20100525Available from: 2010-08-05 Created: 2010-08-05 Last updated: 2011-01-14Bibliographically approved

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Vitos, LeventeJohansson, Börje
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