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Ultradeep, low-damage dry etching of SiC
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2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, no 6, 739-741 p.Article in journal (Refereed) Published
Abstract [en]

The Schottky barrier height (Phi(B)) and reverse breakdown voltage (V-B) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O-2 discharges on the near-surface electrical properties of SiC. For low ion energies (less than or equal to 60 eV) in the discharge, there is minimal change in Phi(B) and V-B, but both parameters degrade at higher energies. Highly anisotropic features typical of through-wafer via holes were formed in SiC using an Al mask.

Place, publisher, year, edition, pages
2000. Vol. 76, no 6, 739-741 p.
Keyword [en]
power devices, nf3, plasmas
URN: urn:nbn:se:kth:diva-19508ISI: 000085075200027OAI: diva2:338200
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Zetterling, Carl-MikaelÖstling, Mikael
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Microelectronics and Information Technology, IMIT
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