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Novel technologies for 1.55-mu m vertical cavity lasers
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-9040-4740
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2000 (English)In: Optical Engineering: The Journal of SPIE, ISSN 0091-3286, Vol. 39, no 2, 488-497 p.Article in journal (Refereed) Published
Abstract [en]

We report on three novel vertical-cavity laser (VCL) structures for 1.55-mu m operation. Two of the structures utilize an n-type GalnAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer fusion or metamorphic epitaxial growth. The third employs two wafer-fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p mirror. Ali three VCLs use strained GalnAsP quantum welts as active material and achieve continuous-wave (cw) operation at room temperature or above. The single fused VCL operates up to 17 and 101 degrees C in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reverse-biased tunnel junction for current injection. This laser achieves record high output power (1 mW) at room temperature and operates cw up to 45 degrees C. The double fused VCLs with a 10x10-mu m(2) active area operate cw up to 30 degrees C with threshold current as low as 2.5 mA and series resistance of 30 Omega. The emission spectra exhibit a single lasing mode polarized with 30-dB extinction ratio and a spectral linewidth of 150 MHz.

Place, publisher, year, edition, pages
2000. Vol. 39, no 2, 488-497 p.
Keyword [en]
vertical-cavity laser, Bragg mirror, wafer fusion, localized fusion, metamorphic growth, continuous-wave operation, surface-emitting laser, temperature pulsed operation, long-wavelength vcsels, room-temperature, bragg-reflector, wafer fusion, localized fusion, low-threshold, gaas
URN: urn:nbn:se:kth:diva-19553ISI: 000085384500019OAI: diva2:338245
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Hammar, Mattias
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