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Plasma-induced band edge shifts in 3C-, 2H-, 4H-, 6H-SiC and Si
2000 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 44, no 3, 471-476 p.Article in journal (Refereed) Published
Abstract [en]

Plasma-induced energy shifts of the conduction band minimum and of the valence band maximum have been calculated for 3C-, 2H-, 4H-, 6H-, 6H-SiC and Si. The resulting narrowing of the fundamental band gap and of the optical band gap are presented. The method utilized is based on a zero-temperature formalism within the random phase approximation. Electron-electron, hole-hole, electron-hole, electron-optical phonon and hole-optical phonon interactions have been taken into account. The calculations are based on band structure data from a relativistic, full-potential band structure calculation.

Place, publisher, year, edition, pages
2000. Vol. 44, no 3, 471-476 p.
Keyword [en]
electronic structure, band-gap shifts, electron-hole plasma, exchange and correlation interactions, doped semiconductors, simulation, silicon, gap, polytypes, devices
URN: urn:nbn:se:kth:diva-19566ISI: 000085469300011OAI: diva2:338258
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Persson, Clas
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