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A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget
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2000 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 44, no 3, 549-554 p.Article in journal (Refereed) Published
Abstract [en]

A low-complexity SiGe heterojunction bipolar transistor process based on differential epitaxy and in situ phosphorus doped polysilicon emitter technology is described. Silane-based chemical vapor deposition at reduced pressure was used for low-temperature SiGe epitaxy. Following SiGe epitaxy, the process temperature budget was kept very low with 900 degrees C for 10 s as the highest temperature step. A very high current gain of almost 2000 and cut off frequency of 62 GHz were achieved for a uniform 12% Ge profile. The breakdown voltage BVCEO and forward Early voltage were equal to 2.9 and 6.5 V, respectively.

Place, publisher, year, edition, pages
2000. Vol. 44, no 3, 549-554 p.
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URN: urn:nbn:se:kth:diva-19568ISI: 000085469300021OAI: oai:DiVA.org:kth-19568DiVA: diva2:338260
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Malm, B. Gunnar

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Malm, B. GunnarRadamson, Henry H.Wang, Yong-BinLandgren, GunnarÖstling, Mikael
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