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Influence of annealing on carrier dynamics in As ion-implanted epitaxially lifted-off GaAs layers
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
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2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, no 10, 1306-1308 p.Article in journal (Refereed) Published
Abstract [en]

Electrical and dynamical optical characterization of As-ion implanted and annealed GaAs has been performed. Changes of physical properties induced by annealing have been studied in detail by using layers annealed in small steps in the temperature range 500-700 degrees C. The carrier trapping rate increases exponentially with increase of inverse annealing temperature indicating that in ion-implanted GaAs ultrafast carrier capture occurs to the same trapping centers as in low-temperature-grown GaAs. Relatively large resistivity and electron mobility in As-implanted GaAs have been observed after annealing, which shows that this material possesses properties required for a variety of ultrafast optoelectronic applications.

Place, publisher, year, edition, pages
2000. Vol. 76, no 10, 1306-1308 p.
Keyword [en]
optoelectronic applications, lifetime
Identifiers
URN: urn:nbn:se:kth:diva-19583ISI: 000085560800030OAI: oai:DiVA.org:kth-19583DiVA: diva2:338275
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Marcinkevicius, Saulius

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