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Transient enhanced diffusion of implanted boron in 4H-silicon carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, no 11, 1434-1436 p.Article in journal (Refereed) Published
Abstract [en]

Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several mu m into the samples when annealed at 1600 and 1700 degrees C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increased to 30 min at the same temperatures. A lower limit of the effective B diffusivity at 1600 degrees C is determined to 7x10(-12) cm(2)/s, which is 160 times larger than the equilibrium B diffusivity given in the literature.

Place, publisher, year, edition, pages
2000. Vol. 76, no 11, 1434-1436 p.
Keyword [en]
vapor-phase epitaxy, silicon-carbide, behavior, aluminum, 6h
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:kth:diva-19604ISI: 000085735800028OAI: oai:DiVA.org:kth-19604DiVA: diva2:338296
Note

QC 20150626

Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Linnarsson, Margareta K.Hallén, AndersNordell, N.

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