Transient enhanced diffusion of implanted boron in 4H-silicon carbide
2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 76, no 11, 1434-1436 p.Article in journal (Refereed) Published
Experimental evidence is given for transient enhanced diffusion of boron (B) in ion-implanted silicon carbide (SiC). The implanted B is diffusing several mu m into the samples when annealed at 1600 and 1700 degrees C for 10 min, but the in-diffused tails remain unaffected when the annealing times are increased to 30 min at the same temperatures. A lower limit of the effective B diffusivity at 1600 degrees C is determined to 7x10(-12) cm(2)/s, which is 160 times larger than the equilibrium B diffusivity given in the literature.
Place, publisher, year, edition, pages
2000. Vol. 76, no 11, 1434-1436 p.
vapor-phase epitaxy, silicon-carbide, behavior, aluminum, 6h
IdentifiersURN: urn:nbn:se:kth:diva-19604ISI: 000085735800028OAI: oai:DiVA.org:kth-19604DiVA: diva2:338296
QC 201506262010-08-102010-08-102015-06-26Bibliographically approved