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In situ mesa etching and immediate regrowth in a HVPE reactor for buried heterostructure device fabrication
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
2000 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 210, no 4, 600-612 p.Article in journal (Refereed) Published
Abstract [en]

Mesa etching in a hydride vapour-phase epitaxy (HVPE) reactor has been studied. Etched depth. underetching and shape of the mesas have been analysed as a function of partial pressures of active gases (HCl, PPI, and InCl) stripe orientation and etching temperature. The experimental results show that the depth and undercut can be etched independently. We propose qualitative mechanisms for etching each of the emerging crystallographic planes ((0 0 1), ( 1 1 0) and {1 1 1}). In situ mesa etching with immediate regrowth was applied to the fabrication of buried heterostructure Fabry-Perot lasers. No surface contamination due to exposure to ambient and low process time are advantages of this technique.

Place, publisher, year, edition, pages
2000. Vol. 210, no 4, 600-612 p.
Keyword [en]
in situ etching, InP, etching mechanisms, HVPE, regrowth, inp, hcl
Identifiers
URN: urn:nbn:se:kth:diva-19642ISI: 000085998900023OAI: oai:DiVA.org:kth-19642DiVA: diva2:338334
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Lourdudoss, Sebastian

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