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Electric-field-assisted migration and accumulation of hydrogen in silicon carbide
KTH, Superseded Departments, Electronics.
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-8760-1137
KTH, Superseded Departments, Electronics.ORCID iD: 0000-0002-0292-224X
KTH, Superseded Departments, Electronics.
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2000 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 61, no 11, 7195-7198 p.Article in journal (Refereed) Published
Abstract [en]

The diffusion of deuterium (H-2) in epitaxial 4H-SiC layers with buried highly Al-acceptor doped regions has been studied by secondary ion mass spectrometry. H-2 was introduced in the near surface region by the use of 20-keV implantation after which the samples were thermally annealed. As a result, an anomalous accumulation of H-2 in the high doped layers was observed. To explain the accumulation kinetics, a model is proposed where positively charged H-2 ions are driven into the high doped layer and become trapped there by the strong electric field at the edges. This effect is important for other semiconductors as well, since hydrogen is a common impurity present at high concentrations in many semiconductors.

Place, publisher, year, edition, pages
2000. Vol. 61, no 11, 7195-7198 p.
Keyword [en]
6h
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-19645ISI: 000086031200010Scopus ID: 2-s2.0-0001726503OAI: oai:DiVA.org:kth-19645DiVA: diva2:338337
Note

QC 20150625

Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hallén, AndersLinnarsson, Margareta KNordell, Nils

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