Spatially and time-resolved infrared absorption for optical and electrical characterization of indirect band gap semiconductors
2000 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 364, no 02-jan, 181-185 p.Article in journal (Refereed) Published
The current status of the spatially and time-resolved free-carrier absorption (FCA) method is provided. The FCA technique allows monitoring carrier dynamics in a time scale from nanoseconds to miliseconds by employing either collinear or orthogonal geometry between pump and probe beams. A high spatial resolution is achieved allowing in-depth carrier profiles to be extracted. The method is particularly suited for investigation of injection-dependent optical and recombination phenomena: band gap optical absorption, Shockley-Read-Hall (SRH) lifetime, Auger recombination coefficient, and the injection-dependent surface (interface) recombination velocity. We summarize important aspects of the technique demonstrating numerous measurements that have been implemented in studies of bulk Si, epilaxial 4H-SiC and porous silicon.
Place, publisher, year, edition, pages
2000. Vol. 364, no 02-jan, 181-185 p.
optical spectroscopy, absorption, electronic properties, silicon, silicon carbide, free-carrier absorption, lifetime, transients
IdentifiersURN: urn:nbn:se:kth:diva-19693ISI: 000086555400034OAI: oai:DiVA.org:kth-19693DiVA: diva2:338385
QC 201005252010-08-102010-08-10Bibliographically approved