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Spatially and time-resolved infrared absorption for optical and electrical characterization of indirect band gap semiconductors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5260-5322
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2000 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 364, no 02-jan, 181-185 p.Article in journal (Refereed) Published
Abstract [en]

The current status of the spatially and time-resolved free-carrier absorption (FCA) method is provided. The FCA technique allows monitoring carrier dynamics in a time scale from nanoseconds to miliseconds by employing either collinear or orthogonal geometry between pump and probe beams. A high spatial resolution is achieved allowing in-depth carrier profiles to be extracted. The method is particularly suited for investigation of injection-dependent optical and recombination phenomena: band gap optical absorption, Shockley-Read-Hall (SRH) lifetime, Auger recombination coefficient, and the injection-dependent surface (interface) recombination velocity. We summarize important aspects of the technique demonstrating numerous measurements that have been implemented in studies of bulk Si, epilaxial 4H-SiC and porous silicon.

Place, publisher, year, edition, pages
2000. Vol. 364, no 02-jan, 181-185 p.
Keyword [en]
optical spectroscopy, absorption, electronic properties, silicon, silicon carbide, free-carrier absorption, lifetime, transients
Identifiers
URN: urn:nbn:se:kth:diva-19693ISI: 000086555400034OAI: oai:DiVA.org:kth-19693DiVA: diva2:338385
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Linnros, Jan

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