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Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2000 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 87, no 11, 8039-8044 p.Article in journal (Refereed) Published
Abstract [en]

Titanium tungsten (Ti0.58W0.42) Schottky contacts to both n- and p-type 4H silicon carbide were fabricated using sputtering. The n- as well as p-type Schottky contacts had excellent rectifying characteristics after vacuum annealing at 500 degrees C with a thermally stable ideality factor of 1.06 +/- 0.03 for n-type and 1.08 +/- 0.01 for p-type. The measured Schottky barrier height (SBH) was 1.22 +/- 0.03 eV for n-type and 1.93 +/- 0.01 eV for p-type in the range of 24-300 degrees C. Our results of Ti0.58W0.42 Schottky contacts to both n- and p-type can be explained perfectly by thermionic emission theory and also satisfy the Schottky-Mott model in contrast to earlier works. Capacitance-voltage measurements were also performed and the results were in good agreement with those of current-voltage measurements. In addition, the inhomogeneous behavior with higher ideality factor and lower SBH of p-type Ti0.58W0.42 contacts for as-deposited contacts is explained by using a model with contribution of recombination current originated by lattice defects to thermionic emission current.

Place, publisher, year, edition, pages
2000. Vol. 87, no 11, 8039-8044 p.
Keyword [en]
barrier diodes, ohmic contacts
Identifiers
URN: urn:nbn:se:kth:diva-19761ISI: 000087067400067OAI: oai:DiVA.org:kth-19761DiVA: diva2:338453
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Zetterling, Carl-Mikael

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