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Ground-state study of a donor-acceptor model with finite charge-transfer energy
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2000 (English)In: Physics Letters A, ISSN 0375-9601, Vol. 271, no 02-jan, 134-138 p.Article in journal (Refereed) Published
Abstract [en]

A donor-acceptor model with randomly distributed N donor and N acceptor sites and with finite charge transfer energy Delta is investigated at zero temperature by means of computer simulations on two-dimensional samples of different sizes, We demonstrate that the density of one-electron excitations g(epsilon) for accepters in the vicinity of the Fermi energy mu depends essentially on the size of the sample investigated and that g(epsilon) further away from mu exhibits a size-independent power-law with the non-universal exponent decreasing with increasing Delta. Rigorous relations for mu and for the mapping of g(epsilon) for donors into g(epsilon) for accepters are also given.

Place, publisher, year, edition, pages
2000. Vol. 271, no 02-jan, 134-138 p.
Keyword [en]
coulomb gap, disordered systems, si-b, semiconductor, simulation, glass
URN: urn:nbn:se:kth:diva-19875ISI: 000087996000021OAI: diva2:338567
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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