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Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen
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2000 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 33, no 12, 1551-1555 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide is an important wide-band-gap semiconductor for high temperature, high-voltage, high-power and high-frequency devices. Electrical isolation is an important aspect for device applications. In this report, oxygen ions, 70 keV with doses ranging from 5 x 10(13) to 5 x 10(15) cm(-2), have been implanted into n-type 6H-SiC to investigate the possibility of forming a high-resistive layer. The damage behaviour and internal stress were checked by Rutherford backscattering spectroscopy and channelling, and an x-ray rocking curve, respectively. Atomic force microscope observations revealed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14) cm(-2) After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is over the critical value. Schottky structures of Au/SiC have been fabricated on the annealed samples and I-V curves of metal/SiC/InGeNi were measured at room temperature at both forward and reverse bias; the electrical isolation effect was observed at proper implantation dosages. The results indicated that there exists a dose window for electrical isolation.

Place, publisher, year, edition, pages
2000. Vol. 33, no 12, 1551-1555 p.
Keyword [en]
enhanced thermal-oxidation, ion-implantation, silicon-carbide, amorphization, layers
URN: urn:nbn:se:kth:diva-19880ISI: 000088035100018OAI: diva2:338572
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Zetterling, Carl-MikaelÖstling, Mikael
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Microelectronics and Information Technology, IMIT
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