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Structural and electrical characteristics of oxygen-implanted 6H-SiC
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2000 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 169, 1-5 p.Article in journal (Refereed) Published
Abstract [en]

Silicon carbide is an important wide band gap semiconductor for high-temperature, high-voltage, high-power and high-frequency devices. Ion implantation is an important aspect for both fundamental research and device applications. In this report, oxygen ions, 70 keV with dose ranging from 5 x 10(13) to 5 x 10(15) cm(-2), have been implanted into n-type BH-SIC. The damage behavior and internal stress were checked by Rutherford backscattering spectroscopy and channeling and X-rays rocking curve, respectively. Atomic force microscope observations revealed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14)/cm(-2). After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is above the critical value. Schottky structures of Au/SiC have been fabricated and I-V curves of metal/SiC/InGeNi were measured at room temperature at both forward and reverse bias, electrical isolation effect was observed at proper implantation dose. The results indicated that there exists a dose window for electrical isolations. X-ray photoelectron spectroscopy (XPS) confirmed the formation of silicon oxide and CO due to oxygen implantation. In case of high-dose ion implantation, graphite phase was detected.

Place, publisher, year, edition, pages
2000. Vol. 169, 1-5 p.
Keyword [en]
enhanced thermal-oxidation, silicon-carbide, ion-implantation, amorphization, layers
Identifiers
URN: urn:nbn:se:kth:diva-19903ISI: 000088184200002OAI: oai:DiVA.org:kth-19903DiVA: diva2:338595
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Zetterling, Carl-Mikael

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