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GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP: Fe regrowth
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
2000 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 3, no 9, 439-441 p.Article in journal (Refereed) Published
Abstract [en]

Selective regrowth of semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) by hydride vapor-phase epitaxy around Al-containing wet etched laser mesas is used for the first time to fabricate a GaAs/AlGaAs buried heterostructure laser emitting at 808 nm. The reverse and forward current-voltage characteristics measured at different temperatures up to 80 degrees C indicate no serious leakage current problems. The performance of the laser shows that the SI-GaInP: Fe burying layer fulfills its function as a current and optical confinement layer. The fabrication procedure and the laser characteristics are presented.

Place, publisher, year, edition, pages
2000. Vol. 3, no 9, 439-441 p.
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URN: urn:nbn:se:kth:diva-19910ISI: 000088261000015OAI: oai:DiVA.org:kth-19910DiVA: diva2:338602
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Lourdudoss, Sebastian

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