Change search
ReferencesLink to record
Permanent link

Direct link
GaAs/AlGaAs buried heterostructure laser by wet etching and semi-insulating GaInP: Fe regrowth
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
2000 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, Vol. 3, no 9, 439-441 p.Article in journal (Refereed) Published
Abstract [en]

Selective regrowth of semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) by hydride vapor-phase epitaxy around Al-containing wet etched laser mesas is used for the first time to fabricate a GaAs/AlGaAs buried heterostructure laser emitting at 808 nm. The reverse and forward current-voltage characteristics measured at different temperatures up to 80 degrees C indicate no serious leakage current problems. The performance of the laser shows that the SI-GaInP: Fe burying layer fulfills its function as a current and optical confinement layer. The fabrication procedure and the laser characteristics are presented.

Place, publisher, year, edition, pages
2000. Vol. 3, no 9, 439-441 p.
URN: urn:nbn:se:kth:diva-19910ISI: 000088261000015OAI: diva2:338602
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Lourdudoss, Sebastian
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Electrochemical and solid-state letters

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 24 hits
ReferencesLink to record
Permanent link

Direct link