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Tailoring the colossal magnetoresistivity: La-0.7(Pb0.63Sr0.37)(0.3)MnO3 thin-film uncooled bolometer
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8774-9302
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 77, no 5, 756-758 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial Ca, Sr, and Pb doped manganite films of various compositions and thickness have been prepared to tailor metal-to-semiconductor phase transition to room temperature. Continuous series of solid solutions La-0.7(Pb1-xSrx)(0.3)MnO3 grown by the pulsed laser deposition technique were found to possess superior performance regarding the maximum of temperature coefficient of resistivity (TCR) @300 K. In these films phase transition temperature T-c ranges from 266 to 327 K. We have engineered the film of the optimum composition x = 0.37 exhibiting the maximum of TCR = 7.4% K-1 @295 K. Relatively low excess noise (normalized Value gamma/n of 3 X 10(-21) cm(3)) has been achieved due to the epitaxial quality of the fabricated film. Using this film, infrared radiation bolometer demonstrator, operating at room temperature, has been built and tested. The bolometer resolves the noise equivalent temperature difference as low as 120 nK/root Hz and shows signal-to-noise ratio SNR = 8 X 10(6) root Hz/K, responsivity R = 0.6 V/W, detectivity D = 0.9 x 10(7) cm root Hz/W, and noise equivalent power NEP 3 X 10(-8) W root Hz at 30 Hz frame frequency. For micromachined thermally isolated La-0.7(Pb0.63Sr0.37)(0.3)MnO3 thin-film bolometer one can expect to get responsivity about 4 x 10(3) V/W and detectivity higher than 10(9) cm root Hz/W @30 Hz.

Place, publisher, year, edition, pages
2000. Vol. 77, no 5, 756-758 p.
Keyword [en]
noise, fluctuations, arrays
Identifiers
URN: urn:nbn:se:kth:diva-19940ISI: 000088580300050OAI: oai:DiVA.org:kth-19940DiVA: diva2:338632
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Khartsev, Sergiy

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