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A new test structure for extracting extrinsic parameters in double-polysilicon bipolar transistors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2000 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, Vol. 47, no 9, 1767-1769 p.Article in journal (Refereed) Published
Abstract [en]

A new test structure for parameter extraction is presented and implemented in a double-polysilicon bipolar junction transistor (BJT) process, The test structure is basically a real BJT, but without the intrinsic base. The test structure allows extraction of the base, collector and emitter impedances, and the extrinsic base-collector capacitance.

Place, publisher, year, edition, pages
2000. Vol. 47, no 9, 1767-1769 p.
Keyword [en]
bipolar transistors, modeling, parameter estimation, signal equivalent-circuit, series resistances, emitter
URN: urn:nbn:se:kth:diva-19979ISI: 000088815100013OAI: diva2:338672
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Östling, Mikael
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