Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H-silicon carbide
2000 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 77, no 10, 1478-1480 p.Article in journal (Refereed) Published
We report on the investigation of epitaxial TiC ohmic contacts to Al ion implanted 4H-SiC. TiC ohmic contacts were formed by coevaporation of Ti and C-60 at low temperature (< 500 degrees C). A sacrificial silicon nitride (Si3N4) layer was deposited on the silicon carbide substrate prior to Al implantation in order to reach a high Al dopant concentration at the surface while maintaining a low dose. The combination of epitaxially grown TiC and the silicon nitride layer resulted in a promising scheme to make low resistivity ohmic contacts. The lowest contact resistivity (rho(C)) and sheet resistance (R-s) of the implanted layer at 25 degrees C were as low as 2 x 10(-5) Ohm cm(2) and 0.6 k Ohm/square, respectively.
Place, publisher, year, edition, pages
2000. Vol. 77, no 10, 1478-1480 p.
IdentifiersURN: urn:nbn:se:kth:diva-20001ISI: 000089017200023OAI: oai:DiVA.org:kth-20001DiVA: diva2:338694
QC 201005252010-08-102010-08-10Bibliographically approved