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Effect of UV light irradiation on SiC dry etch rates
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
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2000 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 29, no 3, 342-346 p.Article in journal (Refereed) Published
Abstract [en]

Inductively Coupled Plasma etching of 4H-SiC under ultraviolet illumination was examined for SF6/Ar and Cl-2/Ar chemistries. Etch rate enhancements up to a factor of 8 were observed with UV light irradiation during Cl-2/Ar etching. The enhancement mechanism is related to photodesorption of SiClx and CClx species. Surface morphologies were unchanged as a result of the UV enhancement with Cl-2/Ar discharges. By contrast, there was no effect of UV irradiation on the SiC etch rates in SF6/Ar plasmas, but the surfaces were typically smoother than those obtained without the ultraviolet illumination. In the SF6/Ar chemistry the rate-limiting steps are either Si-C bond-breaking or supply of fluorine radicals to the surface, and not desorption of the SiFx and CFx etch products.

Place, publisher, year, edition, pages
2000. Vol. 29, no 3, 342-346 p.
Keyword [en]
plasma etching, inductively coupled plasma, 4H-SiC, ultraviolet illumination, via holes, inductively-coupled plasma, power devices, nf3, chemistries, semiconductor
Identifiers
URN: urn:nbn:se:kth:diva-20007ISI: 000089056900018OAI: oai:DiVA.org:kth-20007DiVA: diva2:338700
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Zetterling, Carl-Mikael

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