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A BiCMOS wideband amplifier for the extraction of base spreading resistance with noise measurement techniques
2000 (English)In: Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, E-ISSN 1573-1979, Vol. 24, no 3, 187-194 p.Article in journal (Refereed) Published
Abstract [en]

This paper presents a BiCMOS wide band amplifier optimized for maximum sensitivity to noise introduced in the base spreading resistance. It was used to characterize the base spreading resistance of bipolar devices found in Orbit's low-noise, n-well BiCMOS process available through MOSIS. The base spreading resistance is extracted by measuring the output power spectral density of the aforementioned amplifier and isolating the amount caused by thermal noise in the base. The results give insight as to what noise sources are significant in this technology.

Place, publisher, year, edition, pages
2000. Vol. 24, no 3, 187-194 p.
Keyword [en]
BiCMOS wide band amplifier, MOSIS
URN: urn:nbn:se:kth:diva-20057ISI: 000089553400002OAI: diva2:338750
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Ismail, Mohammed
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